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2SA1162S-GR,LF(D is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A S-MINI. Review the specifications below when checking this part for your BOM.
The 2SA1162S-GR,LF(D is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of -50V and a continuous collector current of -150mA. The device operates within a junction temperature range up to +150°C and dissipates 150mW of power. Key electrical characteristics include a DC current gain (hFE) ranging from 70 to 400 and a transition frequency of 80MHz. It is housed in an SC-59 (SOT-363) surface-mount package.
Verify the specific suffix 'D' against official Toshiba documentation, as standard listings typically use '-GR,LF'. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements with the manufacturer before procurement to ensure alignment with project specifications.
Select this component for applications requiring a compact PNP transistor with moderate voltage handling and high current gain. Ensure the SC-59 package footprint matches the PCB layout. Consider the complementary 2SC2712 for push-pull configurations requiring matched thermal and electrical characteristics.
This part belongs to the 2SA1162 series of small-signal bipolar transistors. It is designed for audio and general-purpose amplifier applications where low noise and high linearity are critical. The series is characterized by its compatibility with standard surface-mount assembly processes.
The 2SC2712 is the documented complementary NPN counterpart. Verify pinout compatibility and electrical limits when substituting with other SOT-363 PNP transistors such as the BC857 series, ensuring voltage and current ratings meet or exceed original requirements.
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