Single Bipolar Transistors 2SA1162S-GR,LF(D product image

2SA1162S-GR,LF(D

  • Description:TRANS PNP 50V 0.15A S-MINI
  • Series:-

SKU:5d6a7bb85671 Category: Brand:

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2SA1162S-GR,LF(D is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1162S-GR,LF(D

  • Description:TRANS PNP 50V 0.15A S-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1162S-GR,LF(D

2SA1162S-GR,LF(D

Single Bipolar Transistors Overview

The 2SA1162S-GR,LF(D is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of -50V and a continuous collector current of -150mA. The device operates within a junction temperature range up to +150°C and dissipates 150mW of power. Key electrical characteristics include a DC current gain (hFE) ranging from 70 to 400 and a transition frequency of 80MHz. It is housed in an SC-59 (SOT-363) surface-mount package.

Single Bipolar Transistors Feature Summary

  • Utilizes Toshiba's PCT process for high reliability and low noise performance.
  • Provides excellent hFE linearity across varying collector currents.
  • Designed as a complementary pair to the 2SC2712 NPN transistor.

Single Bipolar Transistors Applications

  • Audio frequency general purpose amplifiers
  • High voltage switching circuits
  • Low noise signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'D' against official Toshiba documentation, as standard listings typically use '-GR,LF'. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements with the manufacturer before procurement to ensure alignment with project specifications.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a compact PNP transistor with moderate voltage handling and high current gain. Ensure the SC-59 package footprint matches the PCB layout. Consider the complementary 2SC2712 for push-pull configurations requiring matched thermal and electrical characteristics.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1162 series of small-signal bipolar transistors. It is designed for audio and general-purpose amplifier applications where low noise and high linearity are critical. The series is characterized by its compatibility with standard surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The 2SC2712 is the documented complementary NPN counterpart. Verify pinout compatibility and electrical limits when substituting with other SOT-363 PNP transistors such as the BC857 series, ensuring voltage and current ratings meet or exceed original requirements.

2SA1162S-GR,LF(D2SA1162S-GR,LF(D

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