2SA1163-BL,LF

$0.21

Description：TRANS PNP 120V 0.1A S-MINI
Series：-

SKU:da4eb2d66a84 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1163-BL,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.1A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1163-BL,LF

Description：TRANS PNP 120V 0.1A S-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：350 @ 2mA, 6V
Power - Max：150 mW
Frequency - Transition：100MHz
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1163-BL,LF

2SA1163-BL,LF

Single Bipolar Transistors Overview

The Toshiba 2SA1163-BL,LF is a silicon PNP epitaxial transistor manufactured using the PCT process. It features a collector-emitter voltage of -120 V and a maximum collector current of -100 mA. The device provides a DC current gain (hFE) ranging from 350 to 700 for the BL suffix classification. Electrical characteristics include a transition frequency of 100 MHz and a noise figure of 1 dB typical at 1 kHz. It is housed in a compact TO-236MOD package.

Single Bipolar Transistors Feature Summary

AEC-Q101 qualified for automotive reliability standards
High voltage rating with excellent hFE linearity
Low noise performance suitable for audio applications

Single Bipolar Transistors Applications

Audio frequency general purpose amplifier circuits
Automotive electronic systems requiring AEC-Q101 compliance

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required hFE binning and lead-free status. Confirm the exact package marking symbol corresponds to the production batch. Ensure the application design accounts for the specified junction temperature limits under varying ambient conditions. Review the latest Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling and low noise are critical requirements. The BL suffix indicates a higher minimum hFE threshold compared to standard classifications. Consider the complementary 2SC2713 NPN transistor for matched pairs in push-pull configurations. Evaluate thermal dissipation capabilities based on the FR4 board mounting conditions specified in the datasheet.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of small signal bipolar transistors designed for general-purpose amplification. It utilizes an epitaxial planar structure optimized for low noise and high gain stability. The product has been in commercial production since December 1982, indicating long-term availability and established manufacturing processes for consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2713 as the complementary NPN transistor. No other direct substitute part numbers are documented in the official specifications.