2SA1201-Y(TE12L,ZC

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1201-Y(TE12L,ZC is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for voltage and power amplifier applications, featuring a high collector-emitter breakdown voltage of -120 V and a typical transition frequency of 120 MHz at -100 mA. The device operates within a junction temperature range of -55°C to +150°C. It utilizes a PW-MINI (SC-62) surface-mount package with three pins. The Y-grade classification specifies a DC current gain (hFE) range of 120 to 240 when tested at -5 V and -100 mA.

Single Bipolar Transistors Feature Summary

• High voltage capability with a collector-emitter breakdown rating of -120 V
• High transition frequency performance suitable for RF and audio frequencies
• Complementary pairing available with the 2SC2881 NPN transistor
• Small flat surface-mount packaging for compact circuit designs

Single Bipolar Transistors Applications

• Voltage amplifier circuits
• Power amplifier stages
• Audio frequency amplification

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required tape-and-reel configuration and RoHS compliance status. Confirm the specific hFE binning corresponds to the Y grade requirements for your design. Ensure the component source aligns with authorized distribution channels to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage PNP switching or amplification in small form factors. Consider the complementary 2SC2881 for push-pull configurations. Evaluate thermal dissipation capabilities based on the specific substrate mounting conditions defined in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of general-purpose PNP transistors. It is engineered for use in consumer electronics and industrial equipment where reliable amplification and switching are required. The device represents a standard solution for legacy and modern amplifier topologies.

Single Bipolar Transistors Replacement Considerations

The 2SC2881 serves as the direct complementary counterpart. Other general-purpose PNP transistors may be considered if they meet the -120 V rating and package constraints, though electrical characteristics will vary.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y grade?

The Y grade indicates an hFE range of 120 to 240 under test conditions of VCE = -5 V and IC = -100 mA.

Is this transistor compatible with the 2SC2881?

Yes, the datasheet explicitly states that the 2SA1201 is complementary to the 2SC2881.

What is the maximum collector current?

The absolute maximum rating for continuous collector current is -800 mA.