2SA1209S

Single Bipolar Transistors Overview

The 2SA1209S is a small signal NPN silicon transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 160 V and a maximum DC collector current of 0.14 mA. The device has a minimum DC current gain (hFE) of 140. It is housed in a TO-126 flange mount package with three through-hole terminals.

Single Bipolar Transistors Feature Summary

• NPN polarity configuration for single-channel operation
• High voltage capability up to 160 V collector-emitter rating
• Flange mount package design for thermal management

Single Bipolar Transistors Applications

• General purpose switching applications
• Small signal amplification circuits
• Voltage regulation stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking and datasheet alignment when sourcing from third-party distributors. Confirm the specific suffix or revision code matches the required electrical specifications, as older stock may vary slightly in packaging or testing standards compared to current production runs.

Single Bipolar Transistors Selection Notes

Select this component for low-current high-voltage applications requiring a flange mount package. Ensure the circuit design accommodates the 0.14 A maximum collector current limit and verify that the TO-126 footprint fits the available board space and thermal requirements.

Single Bipolar Transistors Part Context

This part belongs to the onsemi small signal transistor family. It is designed for general-purpose electronic applications where moderate power dissipation and high voltage blocking are necessary. The TO-126 package provides a robust mechanical structure suitable for chassis mounting.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the NPN type, 160 V rating, and TO-126 package form factor.