Single Bipolar Transistors 2SA1362-GR,LF product image

2SA1362-GR,LF

$0.28
  • Description:TRANS PNP 15V 0.8A S-MINI
  • Series:-

SKU:d21db15d2da6 Category: Brand:

  
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2SA1362-GR,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 15V 0.8A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1362-GR,LF

  • Description:TRANS PNP 15V 0.8A S-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 8mA, 400mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 1V
  • Power - Max:200 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1362-GR,LF

2SA1362-GR,LF

Single Bipolar Transistors Overview

The Toshiba 2SA1362-GR,LF is a silicon PNP epitaxial transistor manufactured using the PCT process. It operates in an SC-59 (TO-236MOD) surface-mount package with a maximum collector current of 800 mA and a collector-emitter voltage rating of -15 V. The device features a high DC current gain ranging from 120 to 400 and a low saturation voltage of -0.2 V max at specified test conditions. Transition frequency is typically 120 MHz, and power dissipation is rated at 200 mW.

Single Bipolar Transistors Feature Summary

  • High DC current gain for efficient signal amplification
  • Low saturation voltage for effective power switching
  • Suitable for small motor driver stages

Single Bipolar Transistors Applications

  • Low frequency power amplifier applications
  • Power switching applications
  • Driver stage for small motors

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the marking code against official Toshiba documentation. Confirm RoHS compliance status through authorized distributors or direct manufacturer channels. Ensure storage temperature ranges are maintained within specified limits during handling. Review reliability data sheets before integrating into designs requiring specific failure rate thresholds.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a compact PNP transistor with moderate voltage ratings and high current gain. The SC-59 package suits space-constrained surface-mount layouts. Evaluate thermal management requirements carefully, as power dissipation is limited to 200 mW. Verify that the transition frequency meets the bandwidth needs of the intended application.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1362 series of silicon PNP transistors designed for general-purpose amplification and switching tasks. Manufactured by Toshiba Semiconductor and Storage, it utilizes the PCT process to achieve consistent electrical characteristics across production batches. The component is widely used in consumer electronics and industrial control systems where reliable low-frequency performance is required.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching voltage, current, and package specifications precisely.

2SA1362-GR,LF2SA1362-GR,LF
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