2SA1381DSTU

Single Bipolar Transistors Overview

The onsemi 2SA1381DSTU is a PNP epitaxial silicon transistor designed for high-voltage applications. It features a maximum collector-emitter voltage (Vceo) of -300 V and a continuous collector current of 100 mA. The device operates with a transition frequency of 150 MHz and supports a power dissipation of 7 W. Packaged in a TO-126-3 configuration, it exhibits low reverse transfer capacitance of 2.3 pF at Vcb = -30 V and maintains a DC current gain range of 60 to 60 at 10 mA and 10 V.

Single Bipolar Transistors Feature Summary

• High voltage capability with -300 V collector-emitter breakdown
• Low reverse transfer capacitance for reduced signal feedback
• Excellent gain linearity supporting low total harmonic distortion
• High-frequency operation suitable for RF and audio amplification

Single Bipolar Transistors Applications

• Audio voltage amplifier circuits
• Current source implementations
• CRT display video output stages
• General-purpose high-voltage amplification

Single Bipolar Transistors Procurement Notes

Verify the specific suffix DStu against the manufacturer's official datasheet to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid traceability documentation. Confirm that the TO-126-3 package dimensions match the target PCB layout requirements before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor requires -300 V blocking capability combined with moderate current handling. The 150 MHz frequency response makes it suitable for applications demanding fast switching or wide bandwidth. Consider the 7 W power dissipation rating for thermal management design in high-power analog circuits.

Single Bipolar Transistors Part Context

The 2SA1381 series belongs to the family of high-voltage PNP epitaxial silicon transistors. These devices are engineered to complement NPN counterparts like the 2SC3503/KSC3503. The technology utilizes epitaxial layer structures to achieve high voltage ratings while maintaining stable gain characteristics across varying operating conditions.

Single Bipolar Transistors Replacement Considerations

• 2SA1381ESTU
• 2SA1381

Single Bipolar Transistors FAQ

What is the typical reverse transfer capacitance value?

The reverse transfer capacitance is specified as 2.3 pF at a collector-base voltage of -30 V.

Is this transistor complementary to other specific models?

Yes, the 2SA1381 is designed as a complement to the 2SC3503 and KSC3503 NPN transistors.