Single Bipolar Transistors 2SA1429-Y(T2OMI,FM product image

2SA1429-Y(T2OMI,FM

  • Description:TRANS PNP 80V 2A MSTM
  • Series:-

SKU:febaee9d15bd Category: Brand:

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2SA1429-Y(T2OMI,FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 80V 2A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1429-Y(T2OMI,FM

  • Description:TRANS PNP 80V 2A MSTM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SC-71
  • Supplier Device Package:MSTM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1429-Y(T2OMI,FM

2SA1429-Y(T2OMI,FM

Single Bipolar Transistors Overview

The Toshiba 2SA1429 is a PNP silicon epitaxial transistor designed for power amplifier and switching applications. It features a collector-emitter voltage of -80 V, a maximum collector current of -2 A, and a collector power dissipation of 1000 mW. The device exhibits a low collector saturation voltage of -0.5 V (max) at -1 A and a typical storage time of 1.0 μs. It has a transition frequency of 80 MHz and is complementary to the 2SC3669 NPN transistor.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient power handling
  • High-speed switching capability with short storage times
  • Complementary pairing with the 2SC3669 NPN transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as standard markings may vary. Confirm environmental compliance against Directive 2002/95/EC requirements before integration. Ensure design reliability aligns with the Toshiba Semiconductor Reliability Handbook guidelines regarding derating concepts under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high-speed switching or amplification within an 80 V limit. Verify that operating conditions remain within absolute maximum ratings to maintain reliability. Consider the complementary 2SC3669 for push-pull configurations. Review safe operating area curves for thermal management during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of PNP bipolar junction transistors manufactured using the PCT process. It is housed in a 2-7D101A package. The series targets general-purpose power applications in consumer and industrial equipment, distinct from automotive or aerospace qualified variants.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3669 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.

2SA1429-Y(T2OMI,FM2SA1429-Y(T2OMI,FM

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