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The Renesas 2SA1461-T2B-A is a silicon PNP small-signal RF transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 200mA. The device operates with a maximum power dissipation of 200mW and supports frequencies up to 510MHz. Packaged in the SC-59 (SOT-346) surface-mount format, it offers a DC current gain (hFE) range of 75 to 300 at specified conditions.
Verify component authenticity through authorized channels. Confirm datasheet specifications match application requirements. Check RoHS compliance status as indicated by manufacturer documentation. Ensure storage and handling procedures follow ESD protection guidelines. Validate part markings against official Renesas standards.
Evaluate thermal management needs based on 200mW power dissipation limit. Consider SC-59 footprint compatibility during PCB layout. Assess frequency response requirements against the 510MHz operational ceiling. Verify hFE binning suitability for specific gain requirements. Review absolute maximum ratings to prevent overstress conditions.
This component belongs to Renesas' discrete bipolar junction transistor portfolio. It serves as a specialized RF solution within the broader semiconductor catalog. The SC-59 packaging aligns with industry-standard surface-mount trends. It complements other active devices in signal chain designs.
Consult official substitution lists for verified equivalents. Cross-reference pinout and electrical parameters before integration. Verify package dimensions match existing footprints. Confirm functional compatibility in target circuit topology.