2SA1627-T-AZ

Single Bipolar Transistors Overview

The 2SA1627-T-AZ is a PNP silicon epitaxial planar transistor manufactured by Renesas Electronics Corporation. It is housed in a TO-126C plastic-encapsulated package. The device is designed for high voltage and high-speed switching applications, featuring low collector saturation voltage characteristics. Key electrical ratings include a maximum collector-base voltage of -600V, a collector-emitter voltage of -600V, and an emitter-base voltage of -7V. The component supports a continuous collector current of -1A and a collector power dissipation of 1.25W at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

• High voltage capability with -600V breakdown ratings
• Optimized for high-speed switching operations
• Low collector saturation voltage for efficient conduction

Single Bipolar Transistors Applications

• High voltage switching circuits
• General purpose amplifier stages
• Power supply output regulation

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation on the datasheet header, as the TO-126C package is historically associated with Jiangsu Changjiang Electronics Technology (JCET). Confirm that the specific suffix -T-AZ aligns with Renesas' official tape-and-reel or bulk packaging specifications. Ensure the part number matches the exact electrical parameters listed in the official Renesas component database to avoid substitution errors with generic equivalents.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation and fast switching speeds. The TO-126C package provides adequate thermal performance for moderate power dissipation levels up to 1.25W. Consider the -600V rating for primary side applications or flyback transformer drivers. Verify that the base drive circuitry can handle the required current for the specified switching frequency without exceeding the junction temperature limits.

Single Bipolar Transistors Part Context

This component belongs to the family of high-voltage PNP bipolar junction transistors. It serves as a discrete semiconductor solution for power management and signal processing tasks where standard general-purpose transistors lack sufficient voltage withstand capability. The technology utilizes silicon epitaxial planar processes to ensure reliability under high electric field conditions typical in industrial and consumer power electronics.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other -600V PNP transistors only if their pinouts and thermal characteristics match the TO-126C configuration.