2SA1689E-HM-AA

Single Bipolar Transistors Overview

The onsemi 2SA1689E-HM-AA is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector current of 50 mA and a collector-emitter breakdown voltage of 300 V. The device is housed in a compact surface-mount package suitable for automated assembly processes.

Single Bipolar Transistors Feature Summary

• High voltage capability with 300 V collector-emitter breakdown rating
• Suitable for low-power switching and amplification tasks
• Compact surface-mount packaging for efficient board space utilization

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-current DC switching applications
• Interface logic level translation

Single Bipolar Transistors Procurement Notes

Verify the specific tape-and-reel quantity and lead times directly with authorized distributors or the manufacturer. Confirm RoHS compliance status and ensure the part number matches the exact suffix requirements for your production line specifications before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high voltage tolerance and moderate current handling is required. Ensure the thermal management strategy aligns with the device's power dissipation limits in the chosen application environment.

Single Bipolar Transistors Part Context

This part belongs to the discrete semiconductor category, specifically single bipolar transistors. It serves as a fundamental active component in electronic circuits requiring reliable PNP switching behavior under high voltage conditions.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for compatible alternatives. Verify pinout compatibility and electrical parameter margins before substituting with other manufacturers' PNP transistors.