2SA1708T-AN

Single Bipolar Transistors Overview

The 2SA1708T-AN is a PNP bipolar transistor from the 2SA1708/2SC4488 matched pair series, manufactured by onsemi. It features a collector-to-emitter voltage of -100 V and a continuous collector current of -1 A. The device utilizes FBET and MBIT processes to achieve low saturation voltage and fast switching speeds. Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 400 at -100 mA, a gain-bandwidth product of 120 MHz, and a collector dissipation of 1 W. It is housed in an NMP (taping) package conforming to the SC-71 standard.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides high breakdown voltage and large current capacity
• Designed for fast switching speed applications

Single Bipolar Transistors Applications

• High-voltage switching applications
• General-purpose amplifier circuits
• Power management systems requiring low saturation voltage

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T-AN' corresponds to the NMP taping package configuration with a minimum packing quantity of 2,500 pieces per box. Confirm that the component meets Pb-Free requirements as indicated in the ordering information section of the datasheet. Ensure compatibility with the specified SC-71 package dimensions during PCB layout.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -100 V collector-to-emitter voltage and -1 A continuous current rating is required. Consider its low saturation voltage and fast switching characteristics for efficient power handling. Verify that the hFE rank (S or T) aligns with the specific gain requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1708/2SC4488 dual transistor series, which pairs a PNP (2SA1708) and an NPN (2SC4488) transistor. Both devices share similar electrical specifications and are designed for complementary operation. The series emphasizes high breakdown voltage and low saturation voltage, making it suitable for demanding switching environments.

Single Bipolar Transistors Replacement Considerations

The 2SA1708S-AN serves as a direct alternative within the same series, differing only in packaging format while maintaining identical electrical characteristics and pinout configuration.

Single Bipolar Transistors FAQ

What is the maximum collector-to-base voltage for the 2SA1708T-AN?

The absolute maximum rating for the collector-to-base voltage (V_CBO) is -120 V.

How is the DC current gain classified for this device?

The DC current gain (hFE) is classified into two ranks based on measurement at -100 mA: Rank S ranges from 140 to 280, and Rank T ranges from 200 to 400.

What is the typical turn-on time for the 2SA1708T-AN?

The typical turn-on time (t_on) is 80 ns, measured under specified test conditions with a pulse width of 20 μs and a duty cycle of 1%.