2SA1774TLR

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SA1774TLR is a PNP general-purpose small signal bipolar junction transistor (BJT) designed for surface-mount applications. It operates with a collector-emitter voltage of -50V and a continuous collector current of -150mA, housed in an SOT-416 package. The device features a transition frequency of 140MHz and a DC current gain ranging from 120 to 390. Power dissipation is rated at 150mW, supporting operation up to a junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• Features excellent hFE linearity for consistent amplification performance across operating ranges.
• Designed as a complementary component to the 2SC5658 and 2SC4617EB NPN transistors.
• Optimized for general-purpose small signal amplifier circuits.

Single Bipolar Transistors Applications

• General-purpose small signal amplification
• Complementary pairing with 2SC5658/2SC4617EB series

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TLR' against the official ROHM datasheet to confirm packaging details and tape-and-reel specifications. Ensure that the ordering code matches the exact electrical characteristics and package dimensions listed in the manufacturer's documentation before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP BJT is required for low-voltage, low-current amplification tasks. Its SOT-416 footprint allows for space-constrained designs, while its high transition frequency supports efficient signal processing in standard electronic equipment applications.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1774 family of general-purpose transistors manufactured by ROHM Semiconductor. It shares core electrical parameters with variants like the 2SA1774EB but differs in physical packaging and taping configurations suitable for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The 2SA1774EB serves as a direct functional equivalent within the same product family, offering identical electrical ratings. Designers should verify pinout compatibility and thermal management requirements when substituting between different package types in existing layouts.

Single Bipolar Transistors FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BVCBO) is -60V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into ranks Q (120-270) and R (180-390).

Is this component suitable for medical equipment?

ROHM products are designed for ordinary electronic equipment. Use in medical devices requires prior consultation with a ROHM sales representative due to high reliability requirements.