2SA1832-GR,LXHF

Single Bipolar Transistors Overview

The 2SA1832-GR,LXHF is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter voltage of -50 V and a continuous collector current of -150 mA. The device has a power dissipation rating of 100 mW to 120 mW depending on the source, with a gain bandwidth product (fT) of 80 MHz. It utilizes an SSM (SOT-416) surface-mount package. Key electrical parameters include a collector-base voltage of -50 V, a collector-emitter saturation voltage of 100 mV, and a maximum operating temperature of +125°C.

Single Bipolar Transistors Feature Summary

• PNP epitaxial silicon construction using PCT process for high reliability
• Surface-mount SSM package design suitable for automated assembly
• High voltage and current capability for general-purpose amplification

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifier circuits
• General-purpose switching applications requiring PNP configuration
• Low-power signal processing stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GR,LXHF against the manufacturer's latest datasheet to confirm packaging and compliance details. Ensure the ordering part number matches the required tape-and-reel quantity if applicable. Cross-reference the absolute maximum ratings with your circuit's thermal management plan to prevent overheating during operation.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -50 V breakdown and -150 mA current capacity is required in a compact SSM footprint. Consider the 80 MHz transition frequency for audio or low-frequency signal applications. Evaluate the 100 mW power dissipation limit against the expected thermal load in the target enclosure design.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's general-purpose bipolar transistor lineup, designed for use in various electronic devices. The 2SA1832 series offers a balance of voltage handling and current drive in a small outline package, making it suitable for space-constrained designs requiring reliable PNP switching or amplification performance.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba's official replacement guide or distributor cross-reference tools for equivalent components meeting identical electrical and mechanical specifications.