2SA1837(LBSAN,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial planar transistor designed for power amplifier applications. It features a high transition frequency of 70 MHz typical, making it suitable for driver stage amplification. The device is electrically complementary to the 2SC4793 NPN counterpart. Absolute maximum ratings include a collector-emitter voltage of -230 V, a collector current of -1 A, and a collector power dissipation of 2 W at an ambient temperature of 25°C, increasing to 20 W when mounted on a case at 25°C. The junction temperature range extends from -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• High transition frequency optimized for RF and audio driver stages
• Complementary pairing with the 2SC4793 NPN transistor
• Robust collector-emitter breakdown voltage rating

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributors, as lead-free availability varies by specific ordering suffix. Confirm package marking details match the required specifications for your assembly process. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to ensure long-term operational stability under thermal stress.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP transistor with high-voltage handling capabilities and moderate current drive. Ensure the thermal management design accommodates the specified power dissipation limits. Verify that the operating frequency remains within the transition frequency specifications for optimal gain performance in amplifier configurations.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of PNP bipolar junction transistors. It is specifically engineered for general-purpose power amplification tasks. The device utilizes an epitaxial planar construction to provide reliable switching and amplification characteristics. Its design supports integration into various consumer and industrial electronic equipment requiring robust signal processing components.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.