2SA1869-Y(JKT,Q,M)

Single Bipolar Transistors Overview

The Toshiba 2SA1869 is a silicon PNP epitaxial planar transistor designed for power amplifier applications. It features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) rating of -3 A at a case temperature of 25°C. The device offers a collector power dissipation (PC) of 10 W under the same thermal conditions. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 240, with specific Y-marked units providing a range of 120 to 240. The transition frequency (fT) is typically 100 MHz, and the collector-emitter saturation voltage (VCE(sat)) is typically -0.3 V at IC = -2 A.

Single Bipolar Transistors Feature Summary

• Engineered for power amplifier applications with good linearity of hFE.
• Utilizes a PCT process for high reliability and performance.
• Designed as a complementary pair to the 2SC4935 NPN transistor.

Single Bipolar Transistors Applications

• Power amplifier circuits
• General electronics applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (JKT, Q, M) against the manufacturer's latest documentation to confirm package type, marking codes, and RoHS compliance status. Ensure the selected variant matches the required hFE classification (O or Y) for your circuit design. Confirm that the JEDEC SC-67 or TOSHIBA 2-10R1A package dimensions align with your PCB footprint requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP power transistor with a -50 V collector-emitter voltage and up to -3 A continuous current capability. Consider the thermal management requirements, as the 10 W power dissipation rating is specified at a case temperature of 25°C. Ensure the application operates within the absolute maximum ratings, particularly regarding junction temperature limits and safe operating area constraints during switching or amplification cycles.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of silicon PNP epitaxial transistors manufactured using the PCT process. It is specifically optimized for power amplifier stages where linearity and complementary pairing with NPN devices are critical. The device is intended for general electronics applications, including computer, office equipment, and industrial robotics, but is not warranted for unintended usage in safety-critical systems.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4935 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the hFE classification for the 'Y' marked version?

The 'Y' marking indicates a DC current gain (hFE) range of 120 to 240 when measured at VCE = -2 V and IC = -0.5 A.

What is the typical transition frequency (fT)?

The typical transition frequency is 100 MHz, measured at VCE = -2 V and IC = -0.5 A.

Is this device suitable for medical instruments?

No. The datasheet restricts usage to general electronics applications and explicitly states it is not intended for medical instruments or other safety devices requiring extraordinarily high quality and reliability.