Single Bipolar Transistors 2SA1869-Y,Q(J product image

2SA1869-Y,Q(J

  • Description:TRANS PNP 50V 3A TO-220NIS
  • Series:-

SKU:8bbb6ee57673 Category: Brand:

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2SA1869-Y,Q(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 3A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1869-Y,Q(J

  • Description:TRANS PNP 50V 3A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:10 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1869-Y,Q(J

2SA1869-Y,Q(J

Single Bipolar Transistors Overview

The Toshiba 2SA1869-Y,Q(J is a silicon PNP epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of -50 V and a continuous collector current of -3 A. The device dissipates up to 10 W at 25°C case temperature. DC current gain ranges from 70 to 240 depending on classification, with a transition frequency of 100 MHz. It operates within a junction temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

  • Designed for power amplifier applications with good linearity of hFE
  • Utilizes Toshiba's PCT (Power Complementary Transistor) process technology
  • Engineered as a complementary pair to the 2SC4935 NPN transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix codes against official documentation to confirm exact binning and packaging specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling and moderate voltage ratings in audio or RF power stages. Consider the complementary 2SC4935 for balanced push-pull configurations. Evaluate thermal management requirements carefully due to the 10 W dissipation capability and ensure adequate heat sinking for sustained operation.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of silicon PNP epitaxial transistors manufactured using the PCT process. These devices are engineered to provide matched characteristics when paired with their NPN counterparts, facilitating efficient implementation in output stages for amplifiers and drivers where symmetry and linearity are critical performance factors.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC4935 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.

2SA1869-Y,Q(J2SA1869-Y,Q(J

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