2SA1869-Y(Q,M)

Single Bipolar Transistors Overview

The Toshiba 2SA1869-Y(Q,M) is a silicon PNP epitaxial planar transistor utilizing the PCT process, designed for power amplifier applications. It features a collector current rating of -3 A and a collector-emitter voltage (VCEO) of -50 V. The device offers a DC current gain (hFE) range of 120 to 240 in the 'Y' classification at IC = -0.5 A. Key electrical parameters include a transition frequency (fT) of 100 MHz, a collector-emitter saturation voltage of -0.3 V typical at IC = -2 A, and a maximum collector power dissipation of 10 W at Tc = 25°C.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SC4935 NPN transistor for push-pull configurations
• Optimized linearity of DC current gain (hFE) for audio and RF power amplification
• High thermal stability with a junction temperature rating up to 150°C

Single Bipolar Transistors Applications

• Power amplifier circuits
• Audio output stages
• RF driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and lead-free status. Confirm RoHS compliance requirements with the supplier prior to purchase. Ensure the selected hFE bin matches the circuit design specifications. Review the absolute maximum ratings carefully to prevent device failure during operation.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs with the 2SC4935. Consider the -3 A continuous collector current limit and the 10 W power dissipation capability under adequate heat sinking. Evaluate the hFE classification ('Y') if high gain consistency is required. Verify that the operating voltage does not exceed the -50 V breakdown limits.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. It utilizes an epitaxial planar structure optimized for power handling. The device is intended for general electronics applications such as computers, office equipment, and industrial robotics, but is specifically characterized for power amplifier performance.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4935 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.