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2SA1900T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 50V 1A MPT3. Review the specifications below when checking this part for your BOM.
The 2SA1900T100Q is a single PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features an MPT3 (TO-243AA) surface-mount package with the collector connected to the case. Key electrical ratings include a maximum collector current of 1 A, a collector-emitter breakdown voltage of 50 V, and a power dissipation capacity of 2 W. The device exhibits a transition frequency of 150 MHz and a minimum DC current gain of 120 at 500 mA. It supports a maximum operating junction temperature of +150°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and REACH SVHC declarations against current regulatory requirements. Validate that the MPT3 package marking matches official datasheet specifications. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to soldering.
Select this component for designs requiring a PNP transistor with 50V rating and 1A continuous current capability in a compact SMD form factor. Consider the 2W power dissipation limit and thermal management needs for the MPT3 package. Verify compatibility with existing NPN counterparts like the 2SC5824 if complementary pairs are required.
This part belongs to the 2SA1900 series of middle-power transistors from ROHM Semiconductor. It serves as a PNP counterpart to NPN devices within similar performance classes. The MPT3 package provides a cost-effective solution for general-purpose switching and amplification tasks where moderate current handling is sufficient.
Publicly confirmed substitute part numbers include 2SAR513P5T100 and BSR31,115. Verify pinout compatibility and electrical parameter overlaps before implementation.
The maximum collector-emitter breakdown voltage (VCEO) is 50 V.
Yes, the MPT3 package design connects the collector directly to the metal tab for improved thermal dissipation.
The datasheet specifies a low saturation voltage, typically around 400 mV at specific test currents, ensuring efficient switching performance.
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