2SA1931,NETQ(J

Description：TRANS PNP 50V 5A TO-220NIS
Series：-

SKU:86eac299e1cf Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2SA1931,NETQ(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1931,NETQ(J

Description：TRANS PNP 50V 5A TO-220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 200mA, 2A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1A, 1V
Power - Max：2 W
Frequency - Transition：60MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220NIS
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1931,NETQ(J

2SA1931,NETQ(J

Single Bipolar Transistors Overview

The Toshiba 2SA1931 is a high-current switching PNP silicon epitaxial transistor utilizing the PCT process. It features a TO-220NIS (JEDEC SC-67) package with a maximum collector current of 5 A and a collector-emitter voltage rating of 50 V. The device offers a low saturation voltage of −0.4 V max at 2 A and a transition frequency of 60 MHz. Key electrical characteristics include a DC current gain of 100 min at 1 A, a storage time of 1.0 μs typ., and a power dissipation capacity of 2 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

Low saturation voltage for efficient switching performance
High-speed switching capability with short storage time
Complementary pairing with the 2SC4881 NPN transistor

Single Bipolar Transistors Applications

High-current switching applications
General-purpose amplifier circuits
Switching and muting circuits

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as lead-free availability varies by production lot. Confirm the specific ordering suffix matches the required packaging and material specifications. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to ensure long-term operational stability under thermal and electrical stress conditions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust high-current handling up to 5 A with fast turn-off characteristics. Ensure adequate heat sinking is provided to maintain junction temperature within the 150 °C limit during continuous operation. Verify that the complementary 2SC4881 is available if a matched push-pull configuration is necessary for the circuit design.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of general-purpose PNP transistors. It is designed for use in consumer electronics, office equipment, and industrial control systems where reliable switching and moderate power amplification are required. The device utilizes an epitaxial structure optimized for speed and current handling capabilities.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4881 as the complementary NPN transistor for paired applications. No other direct substitute part numbers are documented in the official specification.