Single Bipolar Transistors 2SA1931,NSEIKIQ(J product image

2SA1931,NSEIKIQ(J

  • Description:TRANS PNP 50V 5A TO-220NIS
  • Series:-

SKU:d2ea623b0a05 Category: Brand:

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2SA1931,NSEIKIQ(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1931,NSEIKIQ(J

  • Description:TRANS PNP 50V 5A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 1V
  • Power - Max:2 W
  • Frequency - Transition:60MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1931,NSEIKIQ(J

2SA1931,NSEIKIQ(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1931 is a high-current switching PNP transistor utilizing the PCT process. It features a collector-emitter voltage of -50 V, a collector current rating of -5 A, and a power dissipation capacity of 2 W at 25°C case temperature. The device achieves a low saturation voltage of -0.4 V maximum and a transition frequency of 60 MHz. It is housed in a TO-220NIS (JEDEC SC-67) package with a junction temperature limit of 150°C.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient switching performance
  • High-speed switching capability with short storage time
  • Complementary pairing with the 2SC4881 NPN transistor

Single Bipolar Transistors Applications

  • High-current switching applications
  • General electronics equipment
  • Industrial robotics control circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status or packaging variations. Confirm RoHS compliance details directly with the manufacturer as regulatory status may vary by production lot. Ensure the component meets the intended application's reliability standards before integration.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high collector current handling up to 5 A with fast turn-off characteristics. Consider the complementary 2SC4881 for push-pull configurations. Evaluate thermal management requirements carefully due to the 2 W power dissipation limit at case temperature.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP epitaxial transistors manufactured using Toshiba's proprietary PCT process. The series is designed for general-purpose amplification and switching tasks within consumer and industrial electronic systems.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4881 as the complementary counterpart. Verify pinout compatibility and electrical ratings when substituting with other high-current PNP transistors from different manufacturers.

Single Bipolar Transistors FAQ

What is the typical storage time for the 2SA1931?

The typical storage time (tstg) is 1.0 μs under standard test conditions.

Is the 2SA1931 suitable for medical instruments?

No, the product is not intended for use in medical instruments or safety devices requiring extraordinarily high quality and reliability.

What is the maximum collector-base voltage?

The absolute maximum collector-base voltage (VCBO) is rated at -60 V.

2SA1931,NSEIKIQ(J2SA1931,NSEIKIQ(J

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