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2SA20090SL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 120V 0.02A SMINI3-G1. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SA20090SL
- Description：TRANS PNP 120V 0.02A SMINI3-G1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：20 mA
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 2mA, 20mA
- Current - Collector Cutoff (Max)：1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：260 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SMini3-G1
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SA20090SL
Single Bipolar Transistors Overview
The Panasonic 2SA2009 is a silicon PNP epitaxial planar transistor designed for low-frequency high breakdown voltage amplification. It features an S-Mini package (SC-70) with dimensions of 2.1 x 1.3 mm. Key electrical parameters include a collector-emitter voltage of -120 V, collector current of -20 mA, and power dissipation of 150 mW. The device offers a transition frequency of 200 MHz and noise voltage of 130 mV.
Single Bipolar Transistors Feature Summary
- High collector-emitter breakdown voltage capability
- Low noise voltage characteristics
- S-Mini type package enabling equipment downsizing and automatic insertion
Single Bipolar Transistors Applications
- Low-frequency high breakdown voltage amplification
- General electronic equipment
- Office equipment
- Communications equipment
- Measuring instruments
Single Bipolar Transistors Procurement Notes
Verify the specific ordering suffix to confirm the exact hFE rank classification (R, S, or T). Confirm the current lifecycle status as maintenance or discontinued via official channels before finalizing procurement plans. Ensure compliance with RoHS directives and standard application guidelines.
Single Bipolar Transistors Selection Notes
Select this component when high collector-emitter voltage and low noise are required in a compact surface-mount form factor. Consider the available hFE ranks based on gain requirements. Verify that the operating conditions remain within the absolute maximum ratings to prevent device failure.
Single Bipolar Transistors Part Context
This component belongs to the Panasonic small signal bipolar transistor family. It utilizes a silicon PNP epitaxial planar structure. The S-Mini package allows for thinning of equipment and supports tape packing for automated assembly processes.
Single Bipolar Transistors Replacement Considerations
Consult official documentation for verified substitute part numbers. Check pinout compatibility and electrical specifications against potential alternatives.
Single Bipolar Transistors FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (Base open) is -120 V.
What is the transition frequency of the 2SA2009?
The transition frequency is 200 MHz under specified test conditions.
What package type does this transistor use?
It uses the S-Mini type package, also known as SC-70.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
