2SA2014-TD-E

Single Bipolar Transistors Overview

The 2SA2014-TD-E is a PNP bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 80 V and a continuous collector current of 3 A. The device operates with a transition frequency of 250 MHz and supports a power dissipation of 3.5 W. It utilizes the PCP surface-mount package and functions within an ambient temperature range of -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Provides high-speed switching capabilities suitable for digital logic applications
• Designed for efficient operation in low-voltage power supply circuits
• Constructed using silicon technology for reliable thermal performance

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-voltage power supply regulation
• Digital logic interface drivers

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure the component meets required environmental standards for the target application before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 80 V breakdown and 3 A current capacity is required. Consider the PCP package constraints and thermal management needs relative to the 3.5 W power dissipation limit during circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors from onsemi, designed for general-purpose switching and amplification tasks. It serves as a discrete semiconductor solution for managing current flow in electronic systems requiring moderate voltage handling and fast response times.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference parameters such as VCEO, IC, and package type to ensure functional compatibility without modifying existing board layouts.