2SA2112-AN

Single Bipolar Transistors Overview

The 2SA2112-AN is a PNP epitaxial planar silicon transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of -50V and a continuous collector current rating of -3A. The device utilizes an MBIT process to achieve low collector-to-emitter saturation voltage and high-speed switching capabilities. Designed for robust performance, it offers large current capacity suitable for various switching applications.

Single Bipolar Transistors Feature Summary

• Adoption of MBIT process technology
• Low collector-to-emitter saturation voltage
• High-speed switching capability
• Large current capacity

Single Bipolar Transistors Applications

• DC-DC converters
• Relay drivers
• Lamp drivers
• Motor drivers
• Strobe circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation to ensure compatibility with required packaging or tape-and-reel configurations. Confirm that the -50V rating aligns with system voltage requirements. Check thermal management needs given the power dissipation characteristics in the selected package. Ensure sourcing from authorized channels to guarantee component authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring efficient PNP switching with minimal voltage drop. The low VCE(sat) makes it suitable for battery-powered devices where efficiency is critical. Consider the package type for thermal constraints and PCB layout limitations. Compare against similar NPN counterparts if complementary pairs are needed in circuit design.

Single Bipolar Transistors Part Context

This part belongs to onsemi's lineup of bipolar junction transistors optimized for general-purpose switching. It is often used in conjunction with NPN variants like the 2SC series for push-pull configurations. The device is designed for reliability in consumer electronics and industrial control systems requiring compact solutions.

Single Bipolar Transistors Replacement Considerations

• 2SA2126
• 2SA2186

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SA2112-AN?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -50V.

Does the 2SA2112-AN support high-frequency switching?

Yes, the device is characterized by high-speed switching capabilities due to its MBIT process adoption.

What is the typical application for this transistor?

It is commonly used in DC-DC converters, relay drivers, lamp drivers, motor drivers, and strobe circuits.