Single Bipolar Transistors 2SA2199T2LR product image

2SA2199T2LR

$0.07
  • Description:TRANS PNP 50V 0.1A VMN3
  • Series:-

SKU:ddc4df4815d1 Category: Brand:

  
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2SA2199T2LR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 50V 0.1A VMN3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA2199T2LR

  • Description:TRANS PNP 50V 0.1A VMN3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 25mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:110MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-923F
  • Supplier Device Package:VMN3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA2199T2LR

2SA2199T2LR

Single Bipolar Transistors Overview

The 2SA2199T2LR is a general-purpose PNP silicon epitaxial planar transistor designed for small-signal low-frequency amplification. It features excellent hFE linearity and complements the 2SC6114 NPN counterpart. The device supports a collector-emitter voltage of -50V, a collector current of -100mA, and power dissipation of 150mW. DC current gain ranges from 120 to 390 depending on the rank.

Single Bipolar Transistors Feature Summary

  • Excellent hFE linearity for signal fidelity
  • Complements the 2SC6114 NPN transistor

Single Bipolar Transistors Applications

  • Small signal low frequency amplifier

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T2LR against official Rohm documentation to confirm packaging details and availability status. Confirm that the component meets the intended application requirements regarding voltage and current ratings before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a PNP transistor with high current gain linearity. Ensure the design accommodates the -50V collector-emitter voltage limit and 150mW power dissipation constraints at ambient temperatures up to 25°C.

Single Bipolar Transistors Part Context

This part belongs to Rohm's general-purpose transistor lineup, utilizing a PNP silicon epitaxial planar structure. It is packaged in VMN3 format, suitable for surface-mount assembly in compact electronic designs requiring reliable low-frequency amplification capabilities.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states that the 2SA2199 complements the 2SC6114. No other direct replacement part numbers are listed in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The absolute maximum collector-emitter voltage (VCEO) is -50V.

Does this transistor complement another specific model?

Yes, the 2SA2199 is designed to complement the 2SC6114 NPN transistor.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from 120 to 270 for Rank Q and 180 to 390 for Rank R.

2SA2199T2LR2SA2199T2LR
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