2SA684-BP

Single Bipolar Transistors Overview

The MCC 2SA684-BP is a PNP epitaxial silicon transistor designed for low-frequency power amplification. It features a maximum collector current of -1 A and a collector-emitter voltage rating of -50 V. The device operates within a junction temperature range of -55°C to +150°C and provides a DC current gain (hFE) ranging from 85 to 340 depending on the classification rank. Packaged in a TO-92L housing, it offers a power dissipation capability of 0.75 W with a thermal resistance of 167°C/W.

Single Bipolar Transistors Feature Summary

• Designed specifically for low-frequency power amplifier applications
• Utilizes PNP epitaxial silicon planar construction
• Complies with RoHS standards and meets UL 94 V-0 flammability ratings

Single Bipolar Transistors Applications

• Low-frequency power amplification circuits
• Driver amplification stages
• General-purpose switching applications requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required packaging configuration. The standard BP designation indicates bulk packing containing 50,000 pieces per carton. Confirm compliance requirements such as halogen-free status if necessary by checking for specific suffixes like HF. Ensure procurement channels are authorized distributors to guarantee genuine product traceability and quality assurance.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a robust PNP transistor capable of handling up to 1 A of continuous collector current. Consider the TO-92L package constraints regarding thermal management, as the device dissipates 0.75 W at ambient conditions. Evaluate the hFE classification ranks (R, Q, S) to ensure the selected unit meets the specific gain requirements of the target application circuit design.

Single Bipolar Transistors Part Context

This part belongs to the Micro Commercial Components discrete semiconductor lineup, specifically categorized under bipolar junction transistors. It serves as a complementary device to other NPN types in audio or driver amplifier configurations. The TO-92L form factor allows for through-hole mounting on printed circuit boards suitable for general electronic equipment manufacturing.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for direct pin-compatible substitutes from other manufacturers. Verify that alternative components match the -50 V collector-emitter voltage and -1 A current ratings. Ensure replacement parts maintain similar transition frequency characteristics and saturation voltage profiles for equivalent performance.