2SA949-Y(T6SHRP,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949-Y(T6SHRP,FM) is a silicon PNP triple diffused transistor housed in a JEDEC TO-92MOD package. It features a collector-emitter voltage of −150 V and a maximum collector current of −50 mA. The device exhibits a high transition frequency of 120 MHz and low output capacitance of 4.0 pF typical. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240 at −10 mA.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon PNP construction for robust performance
• High breakdown voltage capability suitable for demanding circuits
• Low output capacitance supporting high-frequency signal integrity
• High transition frequency enabling rapid switching operations

Single Bipolar Transistors Applications

• Driver-stage audio amplifier circuits
• High-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required hFE binning and packaging format. Confirm RoHS compatibility status with the manufacturer as standard availability varies. Ensure the TO-92MOD pinout aligns with the target PCB footprint design requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require high voltage handling combined with fast switching speeds. The specified hFE range ensures consistent amplification characteristics. Verify that the thermal dissipation limits accommodate the expected operating temperature range for reliable long-term performance.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. These devices are engineered for general-purpose electronics, offering a balance of voltage rating and speed. The TO-92MOD package provides a compact form factor suitable for various consumer and industrial electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Cross-reference electrical parameters such as VCEO, IC, and hFE ranges. Verify package compatibility and pin configuration alignment. Consult official substitution lists from Toshiba Semiconductor and Storage for confirmed equivalent components.

Single Bipolar Transistors FAQ

What does the 'Y' designation indicate in the part number?

The 'Y' suffix specifies the DC current gain (hFE) classification, which ranges from 120 to 240 under standard test conditions.

Is this transistor suitable for automotive safety systems?

No, the documentation explicitly prohibits use in equipment requiring extraordinarily high reliability, including automotive transportation control systems.

What is the maximum collector power dissipation?

The absolute maximum rating for collector power dissipation is 800 mW at an ambient temperature of 25°C.