2SA965-Y(T6CANO,FM

Description：TRANS PNP 120V 0.8A TO-92MOD
Series：-

SKU:ce21941c13c9 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA965-Y(T6CANO,FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA965-Y(T6CANO,FM

Description：TRANS PNP 120V 0.8A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 5V
Power - Max：900 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA965-Y(T6CANO,FM

2SA965-Y(T6CANO,FM

Single Bipolar Transistors Overview

The Toshiba 2SA965 is a silicon PNP epitaxial type transistor utilizing the PCT process. It features a collector-emitter voltage of -120 V and a maximum collector current of -800 mA. The device provides a DC current gain ranging from 80 to 240, with a transition frequency of 120 MHz. Power dissipation reaches 900 mW at 25°C ambient temperature. It operates within a junction temperature range up to 150°C and is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

Complementary to the 2SC2235 NPN transistor for matched circuit performance
Designed specifically for power amplifier applications
Suitable for driver-stage amplifier configurations

Single Bipolar Transistors Applications

Power amplifier circuits
Driver-stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations. Confirm the specific hFE classification suffix (O or Y) required for your design's gain requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs with the 2SC2235. Ensure the application stays within the 900 mW power dissipation limit at the expected ambient temperature. Verify that the required DC current gain falls within the specified 80 to 240 range for the chosen suffix code.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of general-purpose small signal transistors. It is manufactured using the PCT process to ensure high reliability and consistent electrical characteristics. The device is intended for use in consumer electronics, office equipment, and measuring instruments where moderate power handling is required.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states the 2SA965 is complementary to the 2SC2235. No other direct replacement part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the hFE classification for the 'Y' suffix?

The 'Y' suffix indicates a DC current gain (hFE) range of 120 to 240 when tested at VCE = -5 V and IC = -100 mA.

Is this transistor suitable for aerospace applications?

No. The document explicitly prohibits use in aerospace industry equipment or any systems requiring extraordinarily high levels of quality and reliability.