Single Bipolar Transistors 2SB1030A product image

2SB1030A

  • Description:TRANS PNP 50V 0.5A NS-B1
  • Series:-

SKU:b27e0030daaf Category: Brand:

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2SB1030A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 50V 0.5A NS-B1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1030A

  • Description:TRANS PNP 50V 0.5A NS-B1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 150mA, 10V
  • Power - Max:300 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:NS-B1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1030A

2SB1030A

Single Bipolar Transistors Overview

The Panasonic 2SB1030A is a silicon PNP epitaxial planar transistor designed for low-frequency amplification. It features a collector-emitter voltage of -50 V, a collector current of -0.5 A, and a power dissipation of 300 mW at 25°C ambient temperature. The device utilizes the NS-B1 package with radial taping support. Electrical characteristics include a transition frequency up to 120 MHz and a forward current transfer ratio (hFE) ranging from 40 to 340 depending on the specific rank classification.

Single Bipolar Transistors Feature Summary

  • Optimized for high-density mounting configurations
  • Supports supply via radial taping methods
  • Complementary pairing available with the 2SD1423A

Single Bipolar Transistors Applications

  • Low-frequency amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the exact hFE rank (Q, R, or S) required for your circuit design, as gain varies significantly between classifications. Confirm the latest product status directly with Panasonic, as this component may be subject to planned maintenance or discontinuation schedules. Ensure compliance with RoHS Directive standards during procurement.

Single Bipolar Transistors Selection Notes

Select the 2SB1030A when a compact PNP transistor suitable for low-frequency applications is needed. Consider the specific hFE rank based on the required current gain stability. Verify that the 300 mW power dissipation rating aligns with the thermal management capabilities of the target application environment.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic Silicon PNP epitaxial planar transistor series. It is specifically engineered for general-purpose low-frequency amplification tasks. The device is part of a complementary pair system, designed to work alongside NPN counterparts like the 2SD1423A for balanced circuit performance.

Single Bipolar Transistors Replacement Considerations

The official complementary counterpart specified by the manufacturer is the 2SD1423A. No other direct substitute part numbers are documented in the provided datasheet.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SB1030A?

The maximum collector-emitter voltage (VCEO) with the base open is -50 V.

How is the forward current transfer ratio (hFE) classified?

The hFE is divided into three ranks: Q (85 to 170), R (120 to 240), and S (170 to 340).

What package type does the 2SB1030A use?

It uses the NS-B1 package code, which supports radial taping for high-density mounting.

2SB1030A2SB1030A

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