2SB10630P

Single Bipolar Transistors Overview

The Panasonic 2SB1063P is a silicon PNP triple diffusion planar power transistor designed for high power amplification. It features a TO-220F-A1 full-pack package suitable for heat sink mounting with a single screw. The device supports a maximum collector current of -5A and a peak collector current of -8A, with a collector-emitter voltage rating of -100V. Key electrical characteristics include a transition frequency (fT) of 20 MHz at -0.5A and a DC forward current transfer ratio (hFE) ranging from 40 to 200 depending on the rank classification. The component complies with the RoHS Directive.

Single Bipolar Transistors Feature Summary

• Extremely satisfactory linearity of the forward current transfer ratio hFE
• Wide safe operation area
• High transition frequency fT
• Full-pack package which can be installed to the heat sink with one screw

Single Bipolar Transistors Applications

• Standard applications or general electronic equipment such as office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (R, Q, or P) required for your circuit design, as the datasheet defines distinct gain ranges for each classification. Confirm that the application remains within standard general electronic equipment parameters, as the manufacturer explicitly advises against use in aerospace, automotive, or life support systems without prior consultation. Ensure thermal management aligns with the provided Safe Operation Area curves.

Single Bipolar Transistors Selection Notes

Select this component when a PNP power transistor with high linearity and wide safe operating area is required for audio or RF amplification stages. The TO-220F-A1 package facilitates direct mounting to heatsinks using a single screw, simplifying mechanical assembly. Consider the complementary 2SD1499 NPN transistor if a matched pair configuration is necessary for push-pull amplifier designs.

Single Bipolar Transistors Part Context

The 2SB1063P belongs to the Panasonic Power Transistors series utilizing silicon PNP triple diffusion planar technology. This manufacturing process is optimized specifically for high power amplification tasks. The device is electrically complementary to the 2SD1499 NPN transistor, allowing for paired usage in balanced output circuits. The product lifecycle status should be verified via official channels due to potential maintenance or discontinuation classifications.

Single Bipolar Transistors Replacement Considerations

The 2SD1499 is documented as the complementary NPN counterpart for paired configurations. No other direct substitute part numbers are listed in the official documentation.