2SB1093-AZ

Single Bipolar Transistors Overview

The 2SB1093-AZ is a single PNP Darlington bipolar junction transistor manufactured by Renesas Electronics Corporation. It features a collector-emitter voltage rating of 80 V and a maximum continuous collector current of 1.5 A. The device has a transition frequency of 80 MHz and supports an operating junction temperature up to 150°C. Power dissipation is rated at 1 W in a through-hole package configuration.

Single Bipolar Transistors Feature Summary

• PNP Darlington transistor architecture for high gain applications
• Integrated dumper diode across collector-emitter terminals
• Through-hole packaging suitable for general driving uses

Single Bipolar Transistors Applications

• Hammer drivers
• Solenoid lamp circuits
• Motor driving applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'AZ' against the official Renesas datasheet to confirm compliance with RoHS standards and lead-free specifications. Ensure the ordering part number matches the exact electrical parameters required for the target circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current drive capabilities with integrated protection. The built-in dumper diode simplifies circuit design for inductive loads such as solenoids and motors, reducing the need for external flyback components.

Single Bipolar Transistors Part Context

This component belongs to the discrete semiconductor product line from Renesas Electronics Corporation. It is classified as a single bipolar transistor designed for general-purpose driving tasks where robustness and high gain are necessary.

Single Bipolar Transistors Replacement Considerations

Consult official Renesas documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying pinout, voltage ratings, and thermal characteristics.