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2SB1184TLR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 50V 3A CPT3. Review the specifications below when checking this part for your BOM.
The ROHM 2SB1184TLR is a PNP silicon epitaxial planar power transistor housed in the CPT3 (TO-252) surface-mount package. It provides a collector-emitter voltage of -50V and a continuous collector current of -3A, with a maximum collector power dissipation of 1W at 25°C ambient temperature. The device features a typical low saturation voltage of -0.5V at an IC/IB ratio of -2A/-0.2A. DC current gain ranges from 120 to 270 for the Q grade. It serves as a direct complement to the 2SD1760 and 2SD1864 NPN transistors.
Verify the exact ordering suffix against official documentation to confirm packaging specifications. Confirm that the component meets RoHS standards if required by your manufacturing process. Ensure the supply status aligns with your production timeline, as availability may vary. Cross-reference the datasheet revision date to ensure you are using the most current electrical characteristics and absolute maximum ratings.
Select this component when a PNP power transistor with a -50V rating and -3A current capacity is required. Consider its low saturation voltage for applications demanding minimal power loss during conduction. Verify that the thermal management design supports the specified 1W power dissipation limit at the intended operating ambient temperature. Ensure the circuit requirements match the hFE classification available for the specific order code.
This part belongs to ROHM's lineup of general-use power transistors designed for standard electronic equipment. It utilizes a plastic encapsulated TO-252 package suitable for surface mounting. The device is engineered for use in consumer electronics and office automation rather than automotive or high-reliability safety-critical systems.
The 2SB1243 is listed as a similar level part with the same pinout and package. It offers a higher collector-emitter breakdown voltage of -60V compared to the -50V of the 2SB1184. Both parts share identical physical dimensions and terminal configurations.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.