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2SB1215S-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 100V 3A TP. Review the specifications below when checking this part for your BOM.
The onsemi 2SB1215S-E is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-251-3 package. It supports a maximum continuous collector current of 3 A and offers a collector-emitter breakdown voltage of 100 V, with a collector-base voltage rating of 120 V and an emitter-base voltage limit of 6 V. The device features a transition frequency of 130 MHz and a minimum DC current gain of 70. It dissipates up to 1 W of power and operates at temperatures up to +150 °C.
Verify component authenticity and datasheet alignment before integration. Confirm that the TO-251-3 pinout matches the target PCB footprint. Check RoHS compliance status as indicated in official documentation. Ensure design margins account for the 1 W power dissipation limit at expected ambient temperatures. Validate that the 3 A current rating suits the specific load requirements without exceeding thermal limits.
Select this component when a PNP transistor with 100 V blocking capability and 3 A current capacity is required in a compact through-hole form factor. The low saturation voltage makes it suitable for applications where minimizing conduction loss is critical. Consider the 130 MHz bandwidth if fast switching speeds are necessary. Compare against similar packages like TO-251AA or IPAK if lead length variations are acceptable for the assembly process.
This part belongs to the 2SB1215 series of general-purpose PNP transistors manufactured by onsemi. It shares functional similarities with other devices in the family but is distinguished by its specific electrical ratings and TO-251-3 packaging. The series is engineered for reliability in standard industrial and consumer electronics environments requiring robust bipolar switching elements.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternative PNP transistors having matching voltage, current, and package specifications before substitution.
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