2SB1218GRL

Single Bipolar Transistors Overview

The Panasonic 2SB1218G is a silicon PNP epitaxial planar transistor designed for general amplification. It features an SMini3-F2 package with three pins: Base, Emitter, and Collector. Key electrical parameters include a collector-emitter voltage of -45 V, a collector current of -100 mA, and a power dissipation of 150 mW. The forward current transfer ratio (hFE) ranges from 160 to 460 depending on the rank. Transition frequency is 80 MHz, and collector output capacitance is 2.7 pF.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE
• S-Mini type package allowing downsizing of equipment
• Supports automatic insertion through tape packing and magazine packing

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm availability status. Check the manufacturer's website for the latest product lifecycle information regarding maintenance or discontinuation plans. Ensure compliance with RoHS directives as stated in the datasheet. Confirm pinout alignment during integration.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring compact surface-mount solutions with moderate gain characteristics. Consider the -45 V collector-emitter voltage rating for low-voltage signal processing tasks. Evaluate the thermal constraints given the 150 mW power dissipation limit in the small outline package.

Single Bipolar Transistors Part Context

This device belongs to the Panasonic Small Signal Bipolar Transistor family. It is specifically categorized as a silicon PNP epitaxial planar type intended for general-purpose amplification roles within electronic systems.

Single Bipolar Transistors Replacement Considerations

The complementary NPN transistor is the 2SD1819G.