Single Bipolar Transistors 2SB1386-P-TP product image

2SB1386-P-TP

  • Description:TRANS PNP 20V 5A SOT-89
  • Series:-

SKU:bf159f190c5d Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SB1386-P-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 20V 5A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1386-P-TP

  • Description:TRANS PNP 20V 5A SOT-89
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 4A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 500mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1386-P-TP

2SB1386-P-TP

Single Bipolar Transistors Overview

The MCC 2SB1386-P-TP is a PNP silicon epitaxial transistor housed in an SOT-89 package. It features a collector-emitter voltage of -20 V, a continuous collector current of -500 mA, and a collector power dissipation of 500 mW at 25°C. The device exhibits a transition frequency of 120 MHz and a DC current gain range of 82 to 180 for the 'P' rank. Operating junction temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage
  • Excellent current-to-gain characteristics

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Low-frequency amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE ranking suffix (P, Q, or R) required for your design, as these denote distinct gain ranges. Confirm compliance with RoHS standards via the 'P' suffix and check for halogen-free availability if necessary. Ensure sourcing through authorized distributors to guarantee component authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact SOT-89 footprint with moderate current handling capabilities. Consider the thermal resistance of 250°C/W when calculating heat dissipation requirements. Evaluate the specific hFE bin (P, Q, or R) against circuit gain tolerances to ensure proper biasing and performance stability.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1386 series manufactured by Micro Commercial Components. The series includes variants distinguished by gain rankings: 2SB1386-P, 2SB1386-Q, and 2SB1386-R. These transistors are designed for general electronic applications requiring reliable PNP switching and amplification within standard operating temperature ranges.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP transistors in the SOT-89 package that meet the -20V VCEO and -500mA IC specifications. Verify pinout compatibility (Collector, Emitter, Base) and thermal resistance values before substitution.

Single Bipolar Transistors FAQ

What does the 'P' suffix indicate in the part number?

The 'P' suffix designates the DC current gain (hFE) ranking, which ranges from 82 to 180.

Is the 2SB1386-P-TP RoHS compliant?

Yes, the 'P' suffix indicates that the product is lead-free finish and RoHS compliant.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 500 mW at an ambient temperature of 25°C.

2SB1386-P-TP2SB1386-P-TP

Click on the inquiry