2SB167900L

Single Bipolar Transistors Overview

The Panasonic 2SB1679 is a silicon PNP epitaxial planar transistor designed for low-frequency amplification. It features an S-Mini (SC-70) package suitable for automatic insertion and equipment downsizing. Key electrical parameters include a collector-emitter voltage of -10 V, a collector current of -0.5 A, and a collector power dissipation of 150 mW at 25°C. The device exhibits a transition frequency of 130 MHz and a collector output capacitance of 22 pF. Forward current transfer ratios range from 130 to 350 depending on the rank classification.

Single Bipolar Transistors Feature Summary

• Utilizes an S-Mini type package that facilitates equipment downsizing and supports automatic insertion via tape packing.
• Engineered with large collector output capacitance in a common base configuration with input open-circuited conditions.
• Designed to provide low collector-emitter saturation voltage for efficient switching performance.

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• General electronic equipment such as office machines and measuring instruments
• Communications equipment signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages may apply. Confirm the required hFE rank (R or S) matches design specifications. Ensure compliance with RoHS directives and verify that the application remains within standard usage guidelines rather than specialized safety-critical environments.

Single Bipolar Transistors Selection Notes

Select this component when space constraints require an SC-70 surface-mount package. Choose based on the necessary forward current transfer ratio rank to meet gain requirements. Ensure the operating environment stays within the specified junction temperature limits and absolute maximum ratings to prevent device failure.

Single Bipolar Transistors Part Context

This component belongs to Panasonic's lineup of silicon PNP epitaxial planar transistors intended for general-purpose low-frequency amplification. It is part of a broader family of discrete semiconductor devices manufactured by Panasonic Electronic Components for use in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing should strictly adhere to manufacturer-approved equivalents to ensure compatibility with the S-Mini package and electrical characteristics.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -10 V under standard test conditions.

How does the forward current transfer ratio vary?

The forward current transfer ratio (hFE) varies by rank: Rank R ranges from 130 to 220, while Rank S ranges from 180 to 350 at a collector current of -0.5 A.

Is this transistor suitable for high-frequency applications?

No, it is specifically designed for low-frequency amplification, although it possesses a transition frequency of 130 MHz.