2SB1691WL-WS-E

$0.22

Description：PNP LOW FEQUENCY POWER AMPLIFIER
Series：*

SKU:cb5d9631a067 Category: Single Bipolar Transistors Brand: Renesas Electronics Corporation

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Product introduction

2SB1691WL-WS-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is PNP LOW FEQUENCY POWER AMPLIFIER. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1691WL-WS-E

Description：PNP LOW FEQUENCY POWER AMPLIFIER
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SB1691WL-WS-E

2SB1691WL-WS-E

Single Bipolar Transistors Overview

The Renesas 2SB1691 is a silicon PNP epitaxial planar transistor designed for low-frequency power amplifier applications. It operates with a maximum collector current of –1 A and features a low collector-to-emitter saturation voltage of –0.3 V max at IC/IB = –0.5 A/–0.05 A. The device supports a maximum collector power dissipation of 800 mW when mounted on an alumina ceramic board (25 x 60 x 0.7 mm). It offers a high DC current transfer ratio ranging from 200 to 500 and a gain bandwidth product of approximately 310 MHz. The component is housed in the MPAK (SC-59A) package.

Single Bipolar Transistors Feature Summary

Small physical footprint utilizing the MPAK (SC-59A) package design
Capable of handling large maximum collector currents up to –1 A
Provides low collector-to-emitter saturation voltage for efficient operation
High power dissipation capability supported by specific thermal mounting conditions

Single Bipolar Transistors Applications

Low frequency power amplifiers
Complementary pair configurations with 2SD2655

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix, as production status may vary by grade. Confirm availability directly with Renesas sales offices before placing orders due to potential termination of certain grades. Ensure compliance with specified environmental compatibility requirements and applicable laws regarding controlled substances during procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with high current handling and low saturation voltage. Ensure the application environment allows for proper heat dissipation using an alumina ceramic board to achieve the rated 800 mW power dissipation. Verify that the operating voltage and current limits remain within the absolute maximum ratings to prevent device failure.

Single Bipolar Transistors Part Context

This component belongs to the category of silicon PNP epitaxial planar transistors manufactured by Renesas Electronics Corporation. It is specifically engineered for use in low-frequency power amplifier circuits where compact size and efficient power handling are required. The device serves as a complementary pair partner to the 2SD2655 NPN transistor.