2SB507E

Single Bipolar Transistors Overview

The onsemi 2SB507E is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1.5 A. The device operates with a transition frequency of 8 MHz and supports a maximum power dissipation of 1.75 W. It is housed in a TO-220-3 through-hole package, suitable for high-temperature environments up to 150°C.

Single Bipolar Transistors Feature Summary

• NPN silicon planar epitaxial structure
• High thermal stability with 150°C junction temperature rating
• Through-hole mounting for robust mechanical connection

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the exact manufacturer part number against official onsemi documentation to ensure compatibility with design specifications. Confirm that the TO-220-3 package dimensions and pinout match the target PCB layout requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with 80V blocking capability and 1.5A current handling is required. Consider the 1.75W power dissipation limit and 8MHz transition frequency for appropriate thermal management and speed requirements in the circuit design.

Single Bipolar Transistors Part Context

This component belongs to onsemi's portfolio of discrete power semiconductors. It serves as a fundamental building block for industrial and consumer electronics requiring reliable bipolar transistor performance in medium-power applications.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical electrical ratings and package form factor.