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2SB808G-SPA-AC is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is SILICON EPITAXIAL PLANAR. Review the specifications below when checking this part for your BOM.
The Sanyo 2SB808G-SPA-AC is a silicon epitaxial planar PNP bipolar junction transistor (BJT) designed for low-voltage applications. It features a maximum collector-emitter voltage of -3V and a continuous collector current rating of -150mA. The device operates with a power dissipation capacity of 120mW, making it suitable for compact circuit designs requiring small signal amplification or switching at low potentials.
Verify the specific suffix 'SPA-AC' against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all relevant safety standards required for life-support and aerospace applications before integration into final products.
Select this component when the application requires a PNP transistor capable of operating reliably at extremely low voltages near 3V. Ensure the design accommodates the 120mW power dissipation limit and the -150mA current constraint within the thermal management strategy.
This part belongs to the Sanyo single bipolar transistor family, characterized by its focus on low-voltage efficiency. It serves as a discrete solution for specialized sectors where standard transistors cannot function effectively due to strict voltage limitations inherent in medical and aerospace hardware.
Consult official substitution lists for equivalent PNP BJT components with matching -3V Vceo and 120mW Pd ratings. Verify pinout compatibility and package dimensions to ensure seamless integration without redesigning the printed circuit board layout.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.