2SC25900Q

Single Bipolar Transistors Overview

The Panasonic 2SC2590Q is a silicon NPN epitaxial planar transistor designed for low-frequency power amplification. It features a TO-126B-A1 package that eliminates the need for an insulation plate during heat sink installation. The device supports a collector-emitter voltage of 120 V and a continuous collector current of 0.5 A, with a peak rating of 1.0 A. Power dissipation reaches 1.2 W at 25°C ambient temperature. Transition frequency is rated at 200 MHz, and forward current transfer ratio ranges from 90 to 220 depending on the specific rank classification.

Single Bipolar Transistors Feature Summary

• High transition frequency suitable for low-frequency power amplification applications
• TO-126B package design allows direct mounting to heat sinks without requiring separate insulation plates
• Excellent collector current characteristics defined by forward current transfer ratio hFE

Single Bipolar Transistors Applications

• Low-frequency power amplification circuits
• General electronic equipment such as office machines and measuring instruments
• Communications equipment signal processing

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or official Panasonic channels. Confirm the presence of valid third-party certifications and quality documentation prior to purchase. Review historical vendor performance records and complaint resolution metrics. Ensure compliance with export control regulations if applicable. Request the latest product standards directly from the manufacturer before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Evaluate thermal management requirements based on the 1.2 W power dissipation limit at 25°C ambient conditions. Select appropriate hFE ranks (Q or R) according to circuit gain specifications. Verify compatibility with the TO-126B-A1 footprint and pinout configuration. Consider junction temperature limits up to 150°C for operational safety margins. Assess packaging constraints regarding lead-free soldering processes.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SC series of silicon NPN transistors. It utilizes epitaxial planar technology optimized for robustness in power handling scenarios. The TO-126B-A1 package provides mechanical stability while simplifying thermal interface assembly compared to insulated variants.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical parameters including VCEO, IC, and hFE rankings. Ensure physical package dimensions match the TO-126B-A1 specification.