Single Bipolar Transistors 2SC2655-O(ND1,AF) product image

2SC2655-O(ND1,AF)

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-

SKU:f801ec952339 Category: Brand:

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2SC2655-O(ND1,AF) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-O(ND1,AF)

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2655-O(ND1,AF)

2SC2655-O(ND1,AF)

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is an NPN silicon epitaxial planar transistor designed for power amplifier and switching applications. It features a low collector-emitter saturation voltage of 0.5 V maximum at 1 A collector current, enabling efficient operation in high-current scenarios. The device supports a maximum collector current of 2 A and a collector power dissipation of 900 mW. It exhibits a transition frequency of 100 MHz and a storage time of 1.0 μs typical. The component is housed in a JEDEC TO-92MOD package with a junction temperature rating up to 150 °C.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient power handling
  • High-speed switching capability
  • Complementary pairing with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status through official Toshiba channels or authorized distributors, as environmental markings vary by production lot. Confirm the specific hFE binning classification (O or Y) required for your circuit design, as gain ranges differ significantly between these grades. Ensure the ordering suffix matches the desired packaging format and regulatory certification before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN switching with minimal voltage drop under heavy loads. The complementary 2SA1020 allows for straightforward push-pull configurations. Evaluate thermal management requirements carefully, as the TO-92MOD package limits continuous power dissipation to 900 mW. Verify that the operating collector current remains within the specified absolute maximum ratings to maintain reliability.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup, utilizing a PCT process for optimized performance. It serves as the NPN counterpart to the widely used 2SA1020 PNP transistor, facilitating balanced complementary designs. The device targets consumer electronics and industrial equipment where moderate power handling and reliable switching are essential.

Single Bipolar Transistors Replacement Considerations

The 2SA1020 is the officially documented complementary PNP transistor for use in paired configurations.

2SC2655-O(ND1,AF)2SC2655-O(ND1,AF)

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