2SC2655-Y(T6CN,A,F

Single Bipolar Transistors Overview

The Toshiba 2SC2655-Y(T6CN,A,F is a silicon NPN epitaxial transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It supports a maximum collector current of 2 A and a collector-emitter voltage of 50 V with a power dissipation rating of 900 mW. The 'Y' suffix indicates a DC current gain (hFE) range of 120 to 240 at IC = 0.5 A. Key electrical characteristics include a transition frequency of 100 MHz, a saturation voltage of 0.5 V max at 1 A, and a storage time of 1.0 μs typical.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High-speed switching capability with short storage times
• Complementary pairing available with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier applications
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status by checking the lot number markings on the component body or contacting the manufacturer directly, as indicated in the datasheet documentation. Confirm that the specific ordering suffix matches the required hFE classification and packaging format before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when high collector current handling up to 2 A is required alongside low saturation voltage characteristics. Ensure the application operates within the specified junction temperature limits and utilizes appropriate heat dissipation methods to maintain reliability under continuous heavy loads.

Single Bipolar Transistors Part Context

This device belongs to the general-purpose NPN transistor category designed for robust industrial and consumer electronics use. Manufactured using Toshiba's PCT process, it offers reliable performance in standard through-hole configurations suitable for various circuit board layouts.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP transistor for this series. Verify pinout compatibility and absolute maximum ratings when substituting with other NPN transistors from different manufacturers.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y suffix?

The Y suffix designates an hFE range of 120 to 240 when measured at a collector current of 0.5 A and VCE of 2 V.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 50 V.

Is this transistor intended for aerospace or medical equipment?

No, the product is not intended for unintended uses such as aerospace, medical equipment, or nuclear facilities unless specifically permitted.