Single Bipolar Transistors 2SC2655-Y,T6SWFF(M product image

2SC2655-Y,T6SWFF(M

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-

SKU:cf615fab6c99 Category: Brand:

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2SC2655-Y,T6SWFF(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-Y,T6SWFF(M

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2655-Y,T6SWFF(M

2SC2655-Y,T6SWFF(M

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is a silicon NPN epitaxial planar transistor designed for power amplifier and switching applications. It features a low collector-emitter saturation voltage of 0.5 V maximum at 1 A collector current and a high-speed storage time of 1.0 μs typical. The device supports a continuous collector current of 2 A with a collector power dissipation of 900 mW. Breakdown voltages are rated at 50 V for both collector-base and collector-emitter configurations. The component utilizes the PCT process and is packaged in a JEDEC TO-92MOD (TOSHIBA 2-5J1A) plastic enclosure.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage capability for efficient power handling
  • High-speed switching performance suitable for rapid transitions
  • Complementary pairing available with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm environmental compliance status, as markings indicate RoHS compatibility distinctions. Confirm package type matches the required JEDEC TO-92MOD footprint. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing design parameters. Ensure application conditions remain within absolute maximum ratings to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring moderate power amplification or fast switching speeds within a compact plastic package. The high DC current gain range allows for effective drive requirements. Consider the complementary 2SA1020 for push-pull configurations. Evaluate thermal management needs based on the 900 mW dissipation limit and safe operating area curves provided in the datasheet.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup utilizing epitaxial planar technology. It serves as a standard replacement for legacy components in audio and switching stages. The device is widely recognized for its balance between current handling capacity and switching speed in consumer electronics and industrial control modules.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the official source material.

2SC2655-Y,T6SWFF(M2SC2655-Y,T6SWFF(M

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