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2SC2682-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is NPN BIPOLAR TRANSISTOR. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC2682-AZ
- Description：NPN BIPOLAR TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC2682-AZ
Single Bipolar Transistors Overview
The 2SC2682-AZ is an NPN silicon bipolar junction transistor manufactured by Renesas Electronics Corporation. It is designed for audio frequency power amplifier applications, offering high voltage capabilities suitable for switching and amplification tasks. The component features a collector-emitter voltage rating of 180V and a continuous collector current of 0.1A. It is housed in a standard 3-pin package configuration.
Single Bipolar Transistors Feature Summary
- Designed specifically for use in audio frequency power amplifier circuits
- Provides high voltage operation capability for robust performance
- Utilizes NPN silicon construction for reliable switching and amplification
Single Bipolar Transistors Applications
- Audio frequency power amplifier stages
- General purpose switching applications requiring high voltage tolerance
- Amplification tasks in consumer electronics
Single Bipolar Transistors Procurement Notes
Verify the manufacturer part number against official Renesas documentation to ensure authenticity. Confirm that the specific suffix matches the required specifications. Check RoHS compliance status if environmental regulations apply to your assembly process. Ensure the package type aligns with your PCB footprint requirements before finalizing procurement orders.
Single Bipolar Transistors Selection Notes
Select this component when designing circuits requiring an NPN transistor with a minimum 180V collector-emitter breakdown voltage. Consider the 0.1A current limit when determining suitability for load driving. Evaluate thermal management needs based on the power dissipation characteristics defined in the official datasheet for the specific operating environment.
Single Bipolar Transistors Part Context
This device belongs to the discrete bipolar transistor family offered by Renesas Electronics. It serves as a replacement or alternative for similar NPN power transistors used in audio and general-purpose electronic equipment. The part is distinct from other series within the Renesas portfolio due to its specific voltage and current ratings tailored for amplifier applications.
Single Bipolar Transistors Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent voltage and current ratings. Verify pinout compatibility to prevent circuit damage during installation.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
