Single Bipolar Transistors 2SC2712-BL,LXHF product image

2SC2712-BL,LXHF

$0.25
  • Description:TRANS NPN 50V 0.15A S-MINI
  • Series:-

SKU:0bf5b39f6442 Category: Brand:

  
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2SC2712-BL,LXHF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 0.15A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2712-BL,LXHF

  • Description:TRANS NPN 50V 0.15A S-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:350 @ 2mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2712-BL,LXHF

2SC2712-BL,LXHF

Single Bipolar Transistors Overview

The 2SC2712-BL,LF is a single NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device operates with a transition frequency of 80 MHz and a maximum power dissipation of 150 mW. DC current gain (hFE) is specified at a minimum of 70 under standard test conditions. The component utilizes an S-Mini (TO-236-3, SC-59, SOT-23-3) surface-mount package and supports a maximum junction temperature of 125°C.

Single Bipolar Transistors Feature Summary

  • NPN configuration designed for general-purpose switching and amplification applications
  • Surface-mount construction in a compact S-Mini package for automated assembly
  • High-speed operation capability supported by an 80 MHz transition frequency

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-power switching applications
  • Consumer electronic device internal circuitry

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against official Toshiba documentation to confirm binning or grading specifications. Ensure the ordering part number matches the required hFE range and packaging format. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a small-form-factor NPN transistor with moderate voltage handling. The 50V breakdown and 150mA current limit define its operational boundaries. Consider the thermal constraints imposed by the 150mW power dissipation rating when designing heat management strategies for dense PCB layouts.

Single Bipolar Transistors Part Context

This component belongs to the 2SC2712 series of small-signal transistors produced by Toshiba. The series offers various binning options indicated by suffixes such as BL, GR, and Y. These variants typically share identical electrical ratings but differ in specific gain groupings or manufacturing lot characteristics defined by the original equipment manufacturer.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the 2SC2712-GR,LF(T) and 2SC2712-Y,LF(B). Verify that alternative part numbers meet the same voltage, current, and package requirements.

2SC2712-BL,LXHF2SC2712-BL,LXHF
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