2SC2839E-SPA

Single Bipolar Transistors Overview

The onsemi 2SC2839E-SPA is an NPN epitaxial planar silicon transistor designed for high-frequency amplifier applications. It features a maximum collector current of 100 mA and a collector dissipation of 150 mW at 25°C ambient temperature. The device provides a typical transition frequency (fT) of 320 MHz and a typical reverse transfer capacitance (Cre) of 0.95 pF. Key absolute maximum ratings include a collector-to-base voltage of 30 V, a collector-to-emitter voltage of 20 V, and a base-to-emitter voltage of 5 V.

Single Bipolar Transistors Feature Summary

• Ultrasmall package enabling compactness and slimness of sets
• High fT and small Cre suitable for HF amplifier applications

Single Bipolar Transistors Applications

• HF Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the official datasheet identifies SANYO Electric Co., Ltd. Semiconductor Company as the producer. Ensure the specific ordering number ENN733D matches your supply chain requirements. Confirm that the component meets all necessary safety standards for its intended use, noting that SANYO products are not qualified for life-support or aircraft control systems without explicit consultation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a high transition frequency around 320 MHz. Consider the low reverse transfer capacitance of approximately 0.95 pF for stability in high-frequency stages. Verify that the 150 mW power dissipation rating aligns with your thermal management strategy and that the 100 mA collector current limit satisfies the load requirements of your amplifier design.

Single Bipolar Transistors Part Context

This component belongs to the category of NPN Epitaxial Planar Silicon Transistors. It is specifically engineered for high-frequency operations, distinguishing it from general-purpose switching transistors. The device utilizes a specific ultrasmall package format to facilitate the miniaturization of electronic devices while maintaining performance characteristics required for RF signal amplification.

Single Bipolar Transistors Replacement Considerations

Consult the original manufacturer documentation for verified substitute part numbers. Cross-referencing should strictly adhere to electrical parameters such as fT, Cre, and maximum voltage ratings to ensure functional compatibility in high-frequency amplifier designs.