2SC3142-3-TB-E

$0.07

Description：NPN EPITAXIAL PLANAR SILICON
Series：*

SKU:32b4720342c7 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2SC3142-3-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3142-3-TB-E

Description：NPN EPITAXIAL PLANAR SILICON
Series：*
Mfr：onsemi
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3142-3-TB-E

2SC3142-3-TB-E

Single Bipolar Transistors Overview

The 2SC3142 is an NPN epitaxial planar silicon transistor designed for high-frequency general-purpose amplifier applications. It belongs to the FBET series and features a compact package suitable for set miniaturization. Key electrical characteristics include a typical transition frequency (fT) of 750 MHz and a typical reverse transfer capacitance (cre) of 0.6 pF. Absolute maximum ratings specify a collector-to-emitter voltage (VCEO) of 50 V, a collector current (IC) of 300 mA, and a collector dissipation (PC) of 150 mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

High-frequency performance with a typical transition frequency of 750 MHz
Compact package design enabling reduction in overall device size
Low reverse transfer capacitance for improved signal isolation

Single Bipolar Transistors Applications

High-frequency general-purpose amplification
RF circuit design requiring small form factors

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by SANYO Electric Co., Ltd. Confirm that the specific ordering number matches ENN1066A or equivalent legacy identifiers. Ensure compliance with the absolute maximum ratings provided in the datasheet to prevent device failure during operation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require high-frequency amplification within a limited physical space. The low cre value supports better stability in RF stages. Verify that the required hFE rank aligns with the available classifications (ranks 2, 3, or 4) for your specific gain requirements.

Single Bipolar Transistors Part Context

This transistor is part of the FBET series from SANYO Electric Co., Ltd. It utilizes an NPN epitaxial planar silicon structure optimized for high-speed switching and amplification tasks. The device is housed in a compact surface-mount package designed to facilitate the miniaturization of electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult the original manufacturer documentation for direct equivalents. Cross-reference with other NPN transistors offering similar fT and package dimensions if sourcing from alternative suppliers.

Single Bipolar Transistors FAQ

What are the absolute maximum ratings for the 2SC3142?

The absolute maximum ratings are: Collector-to-Emitter Voltage (VCEO) of 50 V, Collector Current (IC) of 300 mA, and Collector Dissipation (PC) of 150 mW at 25°C.