2SC3326-B,LF

$0.28

Description：TRANS NPN 20V 0.3A TO-236
Series：-

SKU:a61c22e9829a Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC3326-B,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 20V 0.3A TO-236. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3326-B,LF

Description：TRANS NPN 20V 0.3A TO-236
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：300 mA
Voltage - Collector Emitter Breakdown (Max)：20 V
Vce Saturation (Max) @ Ib, Ic：100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：350 @ 4mA, 2V
Power - Max：150 mW
Frequency - Transition：30MHz
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：TO-236
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3326-B,LF

2SC3326-B,LF

Single Bipolar Transistors Overview

The Toshiba 2SC3326-B,LF is a silicon NPN epitaxial transistor designed for muting and switching applications. It features a collector-emitter voltage of 20 V, a collector current of 300 mA, and a power dissipation of 150 mW at ambient temperatures up to 125°C. The device provides a high DC current gain ranging from 200 to 1200, with a typical reverse hFE of 150. Electrical characteristics include a collector-base voltage of 50 V, an emitter-base voltage of 25 V, and a transition frequency of 30 MHz.

Single Bipolar Transistors Feature Summary

High emitter-base voltage rating of 25 V
Low on resistance of 1 Ω (typical)
High DC current gain spanning 200 to 1200
Small JEDEC TO-236MOD package

Single Bipolar Transistors Applications

Muting circuits
Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm thermal ratings and reliability standards. Confirm AEC-Q101 qualification status directly with Toshiba sales representatives as detailed information requires direct inquiry. Ensure compliance with all applicable environmental regulations and restrictions on product use before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high emitter-base voltage tolerance and low on-resistance in small packages. Evaluate the 20 V collector-emitter voltage limit against circuit requirements. Consider the 150 mW power dissipation capability when designing for ambient temperatures exceeding 25°C. Verify that the required DC current gain falls within the specified 200 to 1200 range.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC3326 series of silicon NPN epitaxial transistors manufactured using the PCT process. The series is specifically engineered for muting and switching functions. The device utilizes a compact surface-mount package suitable for space-constrained electronic designs.