2SC3468F-AE

Single Bipolar Transistors Overview

The 2SC3468F-AE is a small signal NPN silicon bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 300 V. The device utilizes a TO-226 cylindrical through-hole package with three terminals. Designed for amplifier applications, it offers a minimum DC current gain (hFE) of 160 and a transition frequency of 150 MHz.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding circuit environments
• Optimized for linear amplifier operations
• Robust construction in a standard through-hole package

Single Bipolar Transistors Applications

• Linear amplification circuits
• General purpose switching applications
• Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'AE' against official onsemi documentation to confirm exact binning or testing criteria, as suffixes often denote specific manufacturing lot attributes or regional compliance variations distinct from the base part number.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation is required alongside moderate current handling capabilities. Ensure the application operates within the specified thermal limits of the TO-226 package and verify that the 150 MHz transition frequency meets the signal bandwidth requirements.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SC3468 series of small signal NPN transistors. It shares similar electrical characteristics with variants like the 2SC3468F-AJ but may differ in packaging or specific manufacturer grading standards defined by onsemi's production specifications.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC3468F-AJ. Verify pinout compatibility and ensure the replacement part meets the 300V and 0.1A ratings before integration.