2SC3503E

Single Bipolar Transistors Overview

The onsemi 2SC3503E is a power NPN silicon bipolar junction transistor housed in a TO-126 plastic flange mount package. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 300 V. The device has a minimum DC current gain (hFE) of 100 at 10 mA and 10 V, with a transition frequency of 150 MHz. Maximum power dissipation is 7 W, and the operating junction temperature range extends from -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 300 V collector-emitter breakdown rating
• Flange mount construction for efficient thermal management
• High current gain suitable for amplifier applications

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring high voltage isolation
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer suffix against official datasheets, as the 2SC3503 designation originates from Sanyo Semiconductor. Confirm that the onsemi version maintains identical pinout and electrical characteristics. Check component status, as some variants may be obsolete or not recommended for new designs. Ensure the TO-126 package matches your PCB footprint requirements.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required. The TO-126 package facilitates heatsinking for power dissipation up to 7 W. Compare hFE ranges and saturation voltages against circuit requirements. Consider thermal resistance values if operating near maximum power limits. Verify compatibility with driving logic levels for switching applications.

Single Bipolar Transistors Part Context

The 2SC3503 series represents a legacy power transistor line originally developed by Sanyo Semiconductor. The designation was later acquired and continued by onsemi. These devices are commonly used in older equipment designs and industrial control systems where robust high-voltage switching is necessary. The TO-126 package remains a standard form factor for through-hole mounting in power electronics.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.