2SC3599E

Single Bipolar Transistors Overview

The 2SC3599E is an NPN silicon power bipolar transistor manufactured by Sanyo Semicon Device. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 300 V. The device utilizes a TO-126 plastic flange mount package with three through-hole terminals. Designed for high-frequency applications, it exhibits a nominal transition frequency of 150 MHz and a minimum DC current gain (hFE) of 100. The component is constructed using silicon material and is intended for amplifier functions within electronic circuits.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 300 V collector-emitter breakdown rating suitable for demanding power environments.
• Optimized high-frequency performance characterized by a 150 MHz transition frequency for signal amplification.
• Robust thermal management design enabled by the metal-flange mounted TO-126 package construction.

Single Bipolar Transistors Applications

• High-voltage amplifier circuits
• General-purpose switching applications
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer suffix against official Sanyo documentation to confirm pinout compatibility and electrical tolerances. Ensure the procurement source provides valid datasheets confirming the TO-126 package style and NPN polarity. Cross-reference the part number with authorized distributors to validate authenticity and avoid counterfeit components that may exhibit degraded high-frequency characteristics or reduced voltage ratings.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor requires both high voltage blocking capability and moderate current handling in a compact form factor. The TO-126 package facilitates direct mounting to heat sinks for improved thermal dissipation compared to standard plastic packages. Consider the 150 MHz transition frequency when designing for RF or wideband signal processing tasks where faster switching speeds are required.

Single Bipolar Transistors Part Context

This transistor belongs to the broader category of discrete semiconductor power transistors designed for general-purpose use. It serves as a standalone active element within larger electronic systems, distinct from integrated circuits or multi-element arrays. The TO-126 packaging standard ensures mechanical compatibility with common heatsinking solutions used in industrial and consumer electronics manufacturing.

Single Bipolar Transistors Replacement Considerations

Consult official Sanyo substitution guides for verified equivalents. Generic replacements must match the NPN polarity, 300 V voltage rating, and TO-126 physical dimensions to ensure proper circuit integration without modification.

Single Bipolar Transistors FAQ

What is the primary function of the 2SC3599E?

It functions as an NPN silicon power bipolar transistor designed primarily for amplifier and switching applications requiring high voltage tolerance.

How is the 2SC3599E physically packaged?

The device is housed in a TO-126 plastic/epoxy flange mount package with three through-hole terminals.